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    Vacuum High And Low Temperature Environment Testing Technology

    Vacuum High And Low Temperature Environment Testing Technology

    Technical Background

    With the development of aerospace technology, some of the high reliability and high performance semiconductor devices, especially the core aerospace components, has become a measure of a country the important symbol of the levels of aerospace science and technology but because of China's integrated circuit industry foundation is weak, the semiconductor device mainly rely on import, not only the high cost of import channels without quality assurance, more there is great potential safety hazard, such as chip implanted trojans structure for this, must have their own research and development at the core of the device.


    Face the Challenge

    In the chip development and manufacturing process, in order to ensure that the device can withstand the harsh environment such as cold black and hot vacuum magnetic particle photon radiation in space, it is necessary to create a high temperature and low temperature vacuum magnetic field, light particle irradiation and other environment for the device, and then let the device work in it to observe whether the electrical parameters of the device are normal under different environments.


    Technical Summary


    Patent NameSpecialConditionsTM Technology

    Patent TypePatented Technology

    Patent Number:201910551107.8

    SpecialConditionsTM technology provides a semiconductor device test probe station and semiconductor device test method. By setting up a vacuum cavity radiation-proof screen and other structures, it can effectively create an integrated high-temperature and low-temperature vacuum test environment and provide a stable test environment for the semiconductor device produced.


    Technical Description


    SpecialConditionsTM Technology provides a semiconductor device test probe station and semiconductor device test method. By setting up a vacuum cavity radiation-proof screen and other structures, it can effectively create an integrated high-temperature and low-temperature vacuum test environment and provide a stable test environment for the semiconductor device produced.

    The radiation shield is used to block the external radiation to the sample table and is located in the vacuum cavity;The sample table is used for placing the sample and is located in the radiation proof screen;The probe arm comprises a probe needle rod and a probe at the end of the probe needle rod, which passes through the vacuum chamber radiation shielding screen and enables the probe to be inserted into the position of the sample to point the needle.

    Further, the radiation shielding screen of the vacuum chamber is provided with a through hole, and the vacuum sealing cover is arranged on the through hole, and the probe needle rod passes through the vacuum chamber radiation shielding screen.

    Further, the probe arm and the sample table are connected through a wire to achieve a thermal balance between the probe arm and the sample table.

    Further, the probe arm is also connected with the radiation shield through a wire to achieve a thermal balance between the radiation shield and the sample table.

    Further, it also includes a microscope for observing the probe point needle, and the microscope is located above the vacuum cavity, and the radiation shield of the vacuum cavity is transparent between the microscope and the probe.

    Further, the sample table includes a carrier table for carrying the sample, which is provided with an opening for inlet and outlet of refrigerating fluid, and a heater for heating the sample table is provided at the bottom of the sample table.

    Further, the sample table is connected with a temperature sensor for measuring the sample table temperature.

    The invention also provides a method for testing a semiconductor device by using the semiconductor device test probe table described above.

    Further, the sample table of the semiconductor device test probe table includes a carrier table for carrying the sample, and the carrier table is provided with an opening for the inlet and outlet of the cooling fluid;In the low temperature experiment, the cooling fluid is used to enter the sample table through the inlet, circulate in the sample table for a week, and then flow out from the outlet, so that the sample table can achieve low temperature.A heater for heating the sample table is arranged at the bottom of the sample table of the semiconductor device test probe table. During the high temperature test, the temperature of the sample table is increased by heating through the control heater.

    Further, during the low temperature experiment, liquid nitrogen is injected into the shielding screen to force the shielding screen to cool down;During a high temperature test, the radiation shield is heated to force the radiation shield to heat up.

    Furthermore, vacuum pump is used to pump air into the vacuum chamber to form a vacuum environment in the vacuum chamber.Or/and add a magnet to a radiation shield to obtain a magnetic field environment;Or/and the use of an accelerator bombardment in a radiation shield to obtain an ion irradiation environment;Or/and use the optical fiber of each band to illuminate the sample in the shield to obtain the illumination environment.


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