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Test application solution of probe station in the third generation semiconductor

Release time:2022-09-02Source: SEMISHARE

With the rise of 5G base stations, new energy vehicles, fast charging and photovoltaic applications, the third generation of high-power semiconductors represented by GaN and SiC are widely used in these hot industries because of their excellent performance, and their high withstand voltage, low on-resistance, and fast switching speed bring higher challenges to wafer-level measurements.


Driven by the steady growth of the power semiconductor market space, the semiconductor performance requirements continue to increase, how to ensure that the selected power devices can operate stably and reliably in high temperature, strong radiation, high power environment to ensure yield, which brings very large test challenges to design engineers.

One of the important equipment in semiconductor testing is the probe station, which is mainly used in the semiconductor industry, optoelectronic industry, integrated circuits and packaging and testing. The main function of the probe station is to test the grain parameter characteristics and classify them for subsequent screening.

The main test objects of high power:

High-power diodes, MOS tubes, IGBTs and other discrete devices, etc

Device Forward Operating Status:

Low voltage, high current, high current state produces high temperature

Device Cut-Off Status:

High voltage, low current, no high temperature in the cut-off state

Test purpose: forward and reverse IV, CV test

Other needs: 10KV, 500A pulse current, high and low temperature, automatic, short circuit protection, personnel high voltage protection, thermal resistance test


When the high voltage and high current test, the more difficult is the high voltage, the high voltage will produce breakdown phenomenon, the occurrence of a relatively large leakage current, so the high voltage on the leakage of electricity requirements are relatively high, to prevent ignition. The cause of the high-voltage test ignition: the air collides and ionizes under the action of the electric field, resulting in a penetrating discharge between the electrodes. At the same time, the air is heated and the temperature rises sharply to create an arc.


How to avoid high-pressure ignition (Figure 1): Point B is 1 standard atmospheric pressure. To improve the ability to withstand breakdown voltage, option one can go in the positive direction of point B (increasing the pressure), or plan two, go in the negative direction of point A (reduce the pressure).


High power high and low temperature test probe station case

Positive pressure working principle: dry air /N2/SF6 with a pressure of more than 5 bar to keep wafer dry, so as to avoid discharge, ignition and other phenomena.


• Maximum voltage 10Kv, maximum current 500A

• 6" to 12" in, manual/semi-automatic/fully automatic

• -60℃~200℃

• mΩ class chuck contact resistance

• Support flake, taiko, warped wafer test

• Full range of high pressure and high flow probes

• High-performance enclosed darkroom effectively shields EMI, light and noise while keeping the sample at low temperatures without frost formation in a dry positive pressure environment

• The chamber structure optimized by the darkroom can greatly reduce dry gas consumption

High-power vacuum test probe station example

Vacuum working principle: vacuum insulation arc extinguishing technology, the use of high vacuum, generally 10-2~ 10-5Pa, the insulation strength of the vacuum gap at this time is much higher than the insulation strength of 1 atmosphere of air and SF6, higher than the insulation strength of transformer oil. All clearances can be made small.


• Can support 4.2K-450K temperature

• Radiation-proof screen design to improve sample temperature uniformity and accuracy

• Probe heat sink design ensures accurate needle drop

• Upgradable loading magnetic field

• Flexible and scalable test application configuration

• Automatic refrigerant flow control, automatic and precise temperature control

 Exhibition Preview

2022.12.7-9, SEMISHARE will attend the 4th Shenzhen International Semiconductor Exhibition, Address: Shenzhen International Convention and Exhibition Center (Baoan New Pavilion). Our booth number: Hall 12, 4A013.

We look forward to your visit and face-to-face communication and discussion with our engineers!

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